MM-6704 - Micro Memory MM-6704 VMEbus Compatible, Non-volatile, High Speed Static Memory

MM-6704 - Micro Memory MM-6704 VMEbus Compatible, Non-volatile, High Speed Static Memory...

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Part Number:: MM-6704
Model Number:: MM-6704
Make:: MICRO MEMORY
Lead Time:: Available
Qty In Stock:: Available

Micro Memory MM-6704 VMEbus Compatible, Non-volatile, High Speed Static Memory Simple Type: Memory Module

The MM-6704 is a high speed, high density static CMOS non- volatile memory module. To maximize density,support devices are surface mounted. Memory devices are 128 Kbytes DIPs to provide the flexibility to mix static CMOS and EPROMs. The board occupies a single card slot. Built in to the board is future expansion to 16 Mbytes using 1 Mbit CMOS chips.The board is designed to be totally compatible with VMEbus specification REV. C1 with block transfer (BLT)of up to 256 bytes in each burst and unaligned data transfers (UAT). CMOS and EPROM can be installed at the same time and a different DTACK* signal generated for each without penalizing either one. Write-protect switches allow disabling the write operation for selected portions of the CMOS RAM, which then appear as read-only memory.

Download the datasheet (PDF)

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Features

Block transfer for sequential access (BLT)
Capacity is 512K to 4M bytes (expandable to 16 Mbytes)
Cycle Time is 150 nsec sustained rate (guaranteed over 25 Mbytes transfer rate for read or write cycles without refresh delays)
Four independent memory blocks(each having independent, adjustable DTACK) allow mixing of RAMs and EPROMs of the same size Three on-board,redundant, fused batteries with battery charger, LED indicator
Module selection on 64 Kbytes boundaries, jumper-selectable for starting and ending address
VMEbus compatible with A32/A24/A16, D32/D16/D8 (UAT) per Revision C.1

Specifications

General

Address: 32 bits + 6-bit Address Modifiers
Battery Types: NiCad (rechargeable) 100mA/hr, data retention 4 weeks (powered down)Lithium (non-rechargeable) 1500 mA/hr, data retention 2 years (powered down)
Capacity: 512K, 1M, 2M, 4M bytes (expandable to 16Mbytes with 1 Mbit CMOS chips)
Cycle/Access Time: 150 nsec (25 Mbytes guaranteed transfer rate)
Data-in/Data-out: 8, 16, 32 bits (UAT)
Modes of Operation: Read, Write, Read-Modify-Write, Write-Protect
Module Selection: 64 Kbytes, jumper-selectable by setting the start and ending addresses
On-Board Batteries: 3 redundant, high-temperature fused batteries; each battery has its own charger, voltage detector and LED display
Operating Temperature: 0 to +60 degrees (Celsius)
Power Requirements: +5V supply @ 1.8A (fully populated with CMOS RAM)
Real Time Clock: (DS12161)Provides accurate time and date and occupies one location in the short I/O space (A16)
Relative Humidity: Up to 95% without condensation
Sequential Access: Block Transfer of 256 bytes (BLT)
Storage Temperature: -40 to +85 degrees (Celsius)

Applications

None Available

Aliases

None Available

MICRO MEMORY Industrial Partner